The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1997
Filed:
May. 07, 1996
Erwin Hammerl, Stormville, NY (US);
Jack A Mandelman, Stormville, NY (US);
Herbert L Ho, Washingtonville, NY (US);
Junichi Shiozawa, Wappingers Falls, NY (US);
Reinhard Johannes Stengl, Wappingers Falls, NY (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
International Business Machines Corporation, Armonk, NY (US);
Siemens, Aktiengesellschaft, Munich, DE;
Abstract
A semiconductor memory device includes a trench formed in a semiconductor substrate. Conductive material is formed in the trench and is insulatively spaced from the semiconductor substrate to form a capacitor. A transfer gate transistor includes source/drain regions formed on a surface of the semiconductor substrate and a control gate which is insulatively spaced from a channel region between the source and drain regions. A buried strap electrically connects the capacitor to one of the source/drain regions of the transfer gate transistor. A portion of the buried strap includes recrystallized silicon.