The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1997
Filed:
Mar. 20, 1996
Applicant:
Inventors:
Yoshiki Nishibayashi, Itami, JP;
Shin-ichi Shikata, Itami, JP;
Naoji Fujimori, Itami, JP;
Takeshi Kobayashi, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257 28 ; 257657 ;
Abstract
A semiconductor device has a structure in which doped layers and undoped layers are alternately stacked and is constituted by (a) a semi-insulating substrate, (b) undoped layers consisting of a substantially undoped diamond material, and (c) thin doped layers formed between the undoped layers and consisting of a diamond material doped with B as an impurity. Stable operation characteristics can be obtained within a temperature range from room temperature to a high temperature while a semiconductor material having a deep impurity level is used.