The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1997

Filed:

Aug. 07, 1995
Applicant:
Inventor:

Avery N Goldstein, Oak Park, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430324 ; 430330 ; 378 34 ; 378 35 ;
Abstract

A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.


Find Patent Forward Citations

Goldstein, Avery. (1997). Lithography exposure mask derived from nanocrystal precursors and a (U.S. Patent No. 5670279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5670279

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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