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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5670115 B1

PDFFull Text
Date of Patent:
Sep. 23, 1997

Filed:

Oct. 16, 1995

Hydrogen sensor

Applicant:
Inventors:

Yang-Tse Cheng, Rochester Hills, MI (US);

Yang Li, Troy, MI (US);

Daniel John Lisi, Eastpointe, MI (US);

Stanley Gutowski, Pittsford, NY (US);

Andrea A Poli, St. Clair Shores, MI (US);

Assignee:

General Motors Corporation, Detroit, MI (US);

Attorney:

Grove; George A.

Primary Examiner:

Jill Warden

Assistant Examiner:

Sharidan Carrillo

Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
422 90 ; 422 83 ; 422 94 ; 422 95 ; 422 96 ; 422 97 ; 2042 / ; 204291 ; 204293 ; 204419 ; 429218 ; 429223 ;
Abstract

A sensor for hydrogen is disclosed comprising an electrically insulating substrate carrying a thin amorphous film of co-deposited nickel and zirconium and an overlying film of palladium wherein during the operation of the sensor, hydrogen in a sample gas is dissociated on the palladium film and diffuses into the nickel-zirconium film to change its electrical resistance in proportion to the amount of hydrogen in the sample to be analyzed.

Find Patent Forward Citations

Cheng, Yang-Tse. (1997). Hydrogen sensor (U.S. Patent No. 5670115). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5670115

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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