The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
Jul. 05, 1996
Applicant:
Inventors:
Sylvain Delage, Bures Sur Yvette, FR;
Marie-Antoinette Poisson, Paris, FR;
Christian Brylinski, Neuilly Sur Seine, FR;
Herve Blanck, Arcueil, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257198 ; 257200 ; 257201 ; 257586 ;
Abstract
A bipolar transistor in which the emitter possesses a double 'mesa' structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.