The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
Oct. 26, 1995
Applicant:
Inventors:
Dwight C Streit, Seal Beach, CA (US);
Thomas R Block, Los Angeles, CA (US);
Assignee:
TRW Inc., Redondo Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257201 ; 257615 ; 438168 ; 438172 ;
Abstract
A pseudomorphic HEMT having a partially relaxed InGaAs channel layer. In order to increase device performance and lower the electron transport energy levels within the potential well defined by the conduction band of the channel layer, the channel layer thickness is increased beyond a critical thickness that defines where a strained InGaAs channel becomes relaxed and forms crystal lattice dislocations. The channel layer is partially relaxed in that the channel layer thickness exceeds the critical thickness, but the thickness of the channel layer is limited so that dislocations only form in a single direction.