The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 1997

Filed:

Feb. 23, 1996
Applicant:
Inventors:

Sang Hoon Park, Kyungki-do, KR;

Dong Sauk Kim, Sungnam-shi, KR;

Ju Il Lee, Kyungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438637 ; 438675 ; 438685 ;
Abstract

The present invention discloses a method of forming a tungsten plug within a via hole in which it sequentially forms a barrier metal layer and a tungsten layer on a insulating film including the via hole, forms a photoresist pattern of which size is enough to cover the via hole on the tungsten layer in the upper side of the via hole, etching the tungsten layer by sequentially performing an isotropic etching process and an anisotropic etching process using the photoresist pattern as an etching mask and, after the photoresist pattern is removed, etching the projections of the tungsten layer by performing the anisotropic etching process.


Find Patent Forward Citations

Park, Sang. (1997). Method of forming a tungsten plug in a semiconductor device (U.S. Patent No. 5668064). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5668064

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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