The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 1997

Filed:

Jul. 05, 1996
Applicant:
Inventors:

Junko Matsumoto, Tokyo, JP;

Shigenori Sakamori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ; 438740 ; 438952 ; 438636 ;
Abstract

According to this invention, an etching stopper film constituted by a silicon nitride film is stacked on an insulating film constituted by a silicon oxide film for protecting a wiring to prevent damage to the wiring caused by anisotropic dry etching for forming a contact hole. A resist pattern having the same shape as that of the contact hole is formed by using a reflection prevention film containing nitrogen atoms, the etching stopper film and the reflection prevention film in a contact hole formation region which contain nitrogen atoms and have equal selectivity ratios under a predetermined condition are simultaneously removed by etching, so that a semiconductor device having stable performance and simple manufacturing steps can be obtained.


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