The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
May. 28, 1996
Yoshikazu Ohno, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An insulating film is formed on a main surface of a semiconductor substrate. A resist layer is formed on the entire surface of insulating film. An opening is formed in resist layer. By using resist layer as a mask, insulating film is etched, an opening is formed, and then resist is removed. By using insulating film as a mask, an impurity is introduced by ion implantation, and thus an ion-implanted impurity layer is formed. Heat treatment is performed so that ions included in ion-implanted impurity layer are diffused, forming an impurity layer. Etching is performed using insulating film as a mask, and trench is formed with an impurity layer left on the side and bottom surfaces of the trench, which impurity layer serves as a channel stopper. Then, a buried insulating layer is formed in the trench. Consequently, a method of forming an element isolating region is provided by which an impurity layer constituting the element isolating region can be formed minutely with easier control.