The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
Aug. 23, 1996
Deok-Ho Cho, Daejeon, KR;
Soo-Min Lee, Daejeon, KR;
Tae-Hyeon Han, Daejeon, KR;
Byung-Ryul Ryum, Daejeon, KR;
Kwang-Eui Pyun, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Korea Telecommunication Authority, Seoul, KR;
Abstract
A silicon/silicon-germanium bipolar transistor fabrication method employs a metallic silicide film as an extrinsic base electrode to reduce resistance of the extrinsic base electrode, and to increase a maximum oscillation frequency and cut-off frequency due to its self-aligned structure. The fabrication method enables agglomeration to occur on the side wall of the polycrystalline silicon film connected to the metallic silicide film instead of on the interface between the metallic silicide film and the lower silicon/silicon-germanium film, and leads the extrinsic base electrode to be sandwitched by the insulator films, thereby realizing a constant resistance and also resulting in the application of integrated circuits to a mass production mechanism.