The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
Mar. 20, 1995
Applicant:
Inventor:
Shunichi Ishihara, Ikoma, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 257 49 ; 257431 ; 257458 ; 257461 ;
Abstract
A defect-free semiconductor device having a stacked layer structure formed on a substrate made of a material different from crystalline silicon, said stacked layer structure comprising an amorphous silicon layer on said substrate as a buffer layer and a polycrystalline silicon semiconductor active layer with a multilayered structure disposed on said amorphous silicon layer, said multilayered structure having at least a first polycrystalline silicon layer in non-junction forming contact with said amorphous silicon layer and a second polycrystalline silicon layer having a conductivity type opposite the conductivity type of said first polycrystalline silicon layer.