The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1997
Filed:
May. 09, 1995
Applicant:
Inventor:
Allan E Schultz, St. Paul, MN (US);
Assignee:
Seagate Technology, Inc., Scotts Valley, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B / ; C23C / ;
U.S. Cl.
CPC ...
360113 ; 2041922 ;
Abstract
A method of producing a magnetoresistive read transducer with improved longitudinal bias due to high exchange coupling is disclosed. A layer of antiferromagnetic material is sputtered deposited onto a layer of ferromagnetic material in the absence of a magnetic field and at a power density below 0.7 W/cm.sup.2. The layers of ferromagnetic material and antiferromagnetic material are annealed at a low temperature of between 200.degree. C. and 250.degree. C. for between 6 and 26 hours.
Schultz, Allan. (1997). No-field, low power femn deposition giving high exchange films (U.S. Patent No. 5666247). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5666247
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile