The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 1997

Filed:

Nov. 14, 1996
Applicant:
Inventors:

Sung Ku Kwon, Kyoungki-do, KR;

Seung Moo Lee, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438427 ; 438699 ; 438437 ;
Abstract

A method for forming field oxide films in a semiconductor device, characterized by treating a trench mask and a trench oxide to make their surfaces positively charged so that an ozone-TEOS USG film might be deposited at a rapid rate on the trench oxide but at slow rate on the trench mask, whereby production yield can be significantly improved.


Find Patent Forward Citations

Kwon, Sung. (1997). Method for forming field oxide film in semiconductor device (U.S. Patent No. 5665635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5665635

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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