The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1997
Filed:
Feb. 13, 1996
Hiroaki Anmo, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A BiCMOS semiconductor device comprising a substrate, a vertical bipolar transistor provided on the substrate and having a first conductive base terminal electrode formed in a portion of a first semiconductor film provided on the substrate, a second conductive semiconductor terminal electrode formed in a second semiconductor film provided through an insulating layer on the first semiconductor film, the first and second conductive electrodes being disposed such that portions thereof overlap each other, and an LDD (lightly doped drain)-type MOS transistor provided on the substrate and having a gate electrode formed in a portion of said first semiconductor film and a gate side wall formed on a side wall of said gate electrode, wherein the insulating layer is caused to exist selectively in a region in which the first and second conductive electrodes are overlapped, and constitutes at least a portion of the gate side wall.