The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1997
Filed:
Jun. 10, 1994
Yoshitatsu Kawama, Amagasaki, JP;
Mikio Deguchi, Amagasaki, JP;
Shigeru Mitsui, Amagasaki, JP;
Hideo Naomoto, Amagasaki, JP;
Satoshi Arimoto, Amagasaki, JP;
Satoshi Hamamoto, Amagasaki, JP;
Hiroaki Morikawa, Amagasaki, JP;
Hisao Kumabe, Amagasaki, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.