The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1997
Filed:
May. 10, 1995
Jeong Soo Byun, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for forming a refractory metal nitride film having excellent diffusion barrier properties suitable for a dielectric electrode includes a step of depositing a refractory metal film containing nitrogen on a silicon substrate in a mixed gas atmosphere of Ar and N.sub.2, such that the volumetric content of the nitrogen in the mixed gas does not exceed 20%, and a step of forming a completed refractory metal film by subjecting the refractory metal film to a heat treatment in an N.sub.2 or NH.sub.3 atmosphere. The content of nitrogen in the refractory metal film depends on the content of nitrogen in the ambient gas, and the ratio of nitrogen contained in the refractory metal film to the refractory metal does not exceed unity. The refractory metals may be any of the transition metals in Groups IVB, VB, and VIB of the periodic table.