Semiconductor integrated circuit device comprising cmos transistors and

Abstract

The semiconductor IC device has a circuit arrangement constituted by a first CMOS logic gate having input and output terminals, and a second CMOS logic gate which performs the same logic operation as that of the first CMOS logic gate and which has an input terminal connected to the input terminal of the first CMOS logic gate. The arrangement also requires a differentiator circuit which has an input terminal thereof connected to an output terminal of the second CMOS logic gate and has an output terminal connected to the output terminal of the first CMOS logic gate. With such an arrangement, the dependency of the effective gate propagation delay time on an output load is lowered. As a result, therefore, the arrangement can be effected using a low power supply voltage while securing a high operation speed as well as a low power consumption. The CMOS logic gates can also be facilitated in combination with NPN bipolar transistors which are connected therewith in an emitter follower circuit form. This type of arrangement is used to effect a BiNMOS type of logic (inverter) circuit. In accordance with another structural scheme, in place of the first CMOS logic gate, a BiCMOS type of arrangement is effected in combination with the second CMOS logic gate and differentiator.