The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Jul. 11, 1995
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A semiconductor device of SOI structure formed by the mesa isolation method, which can sufficiently reduce the wiring capacitance even if the width of the isolation trench is large. An SOI layer which constitutes an element region is formed by forming a buried oxide film in a silicon substrate, forming an isolation trench in the buried oxide film and burying an isolating material in the isolation trench. By the formation of the SOI layer with the isolating material, a dummy SOI layer is formed in a field part other than the element region. Then, by the formation of a MOSFET gate wiring on the dummy SOI layer, the wiring capacitance is reduced. Furthermore, the dummy SOI layer is completely depleted when the MOSFET threshold value is applied to the gate wiring.