The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Apr. 24, 1996
Takaho Tanigawa, Tokyo, JP;
NEC Corporation, , JP;
Abstract
After formation of a node-contact hole through an interlayer insulation film, an LPCVD using a monosilane gas is employed to form a non-doped polycrystalline silicon film on the interlayer insulation film, filling the node-contact hole. The non-doped polycrystalline silicon film is converted into an n-type polycrystalline silicon film. Using a disilane gas and a phosphine gas as raw gases, an n-type doped amorphous silicon film is formed. After patterning, a heat treatment is employed under a super-high vacuum pressure to convert the n-type doped amorphous silicon film into an n-type polycrystalline silicon film with a rugged surface. A capacitive element is fabricated with a reduced dispersion of capacitance in a simplified manner suitable for a miniaturization of cell size.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile