The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Dec. 08, 1994
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ; B05D / ;
U.S. Cl.
CPC ...
427249 ; 427566 ; 427568 ; 427577 ; 427575 ; 427255 ; 4272551 ; 4272552 ; 4272557 ;
Abstract
Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.