The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Oct. 17, 1994
Applicant:
Inventors:
Kazuhito Yamasawa, Tokyo, JP;
Atsushi Oido, Tokyo, JP;
Akio Nakata, Tokyo, JP;
Nobuya Uchida, Tokyo, JP;
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 11 ; 117 54 ; 117 89 ;
Abstract
In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.