The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
May. 19, 1995
Syoichi Kakimoto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor light emitting device includes a double heterojunction structure including an active layer, a cladding layer having a first conductivity type, and a cladding layer having a second conductivity type, which cladding layers sandwich the active layer, and an undoped cladding layer interposed between the first conductivity type cladding layer and the active layer, which undoped cladding layer is the same material as the first conductivity type cladding layer and has a thickness larger than the diffusion length of carriers in the undoped cladding layer. Therefore, carriers are accumulated in the undoped cladding layer and then regularly injected into the active layer by Coulomb repulsion between the carriers, resulting in a semiconductor light emitting device with reduced heat generation, reduced fluctuation of emitted laser light, and reduced noise.