The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Sep. 19, 1995
Sergio Palara, Acitrezza, IT;
Raffaele Zambrano, S. Giovanni La Punta, IT;
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno, Catania, IT;
Abstract
An integrated circuit including a power stage, a low-voltage component separated from the power stage by an isolating region and a reference potential region at a reference potential. The power stage includes an N-type substrate region which may be biased to a terminal voltage with respect to the reference potential and the isolating region has P-type conductivity. The low-voltage component includes an N-type input region receiving an input voltage. The input voltage and the terminal voltage may oscillate a few tens of volts above or below the reference potential and turn on parasitic transistors. To prevent turning on of the parasitic transistors, switchable conductive paths are interposed between the isolating region on the one hand, and the substrate region, the input region and the reference potential region on the other, for electrically connecting the isolating region to one of the substrate region, input region and reference potential region which presents instant by instant the lowest potential.