Dynamic random access memory having a stacked fin capacitor with reduced

Abstract

A method for fabricating a dynamic random access memory comprises the steps of forming a diffusion region in a semiconductor substrate, providing an insulation layer on the semiconductor substrate, forming a contact hole in the insulation layer to expose the diffusion region at the contact hole, depositing a semiconductor layer on the insulation layer in the amorphous state such that the semiconductor layer establishes an intimate contact with the exposed diffusion region via the contact hole, patterning the semiconductor layer to form a capacitor electrode, depositing a dielectric film on the capacitor electrode such that said dielectric film covers the capacitor electrode; and depositing a semiconductor material to form an opposing electrode such that the opposing electrode buries the capacitor electrode underneath while establishing an intimate contact with the dielectric film that covers the capacitor electrode.