The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Feb. 28, 1995
Yasunobu Nashimoto, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A junction type field-effect transistor in accordance with the invention includes a multi-layer structure which includes a first undoped semiconductor layer, a first first-conductive type semiconductor layer and a second undoped semiconductor layer. These layers are deposited and epitaxially grown in this order on a surface of a semiconductor substrate. A part of the first first-conductive type semiconductor layer is exposed outside in a surface of the multi-layer structure. A second-conductive semiconductor layer is joined to the multi-layer structure through the surface of said multi-layer structure. A drain electrode line and a source electrode line are kept in ohmic contact with the second-conductive type semiconductor layer, and are disposed at opposite sides of a location at which the first first-conductive type semiconductor layer is joined to the second-conductive type semiconductor layer. The invention makes it possible to form the first first-conductive type semiconductor layer thinner, and thereby achieve a gate length shorter than a minimum length achievable by lithography technique.