The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Mar. 08, 1996
Wadad B Dubbelday, Spring Valley, CA (US);
Randy L Shimabukuro, San Diego, CA (US);
Stephen D Russell, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Electroluminescent devices are formed on a transparent sapphire substrate follows. Crystalline silicon is formed on the sapphire substrate and patterned into a mesa. An electrode of, for example, titanium silicide, is formed in the silicon around the mesa, and an electrically insulating layer is formed over the electrode. The crystalline silicon is exposed on the mesa, and a porous silicon layer is formed on the crystalline silicon. An electrode made of aluminum, for example, is formed on the porous silicon layer. This electrode need not be transparent. An outer insulating layer may be formed on the aluminum electrode and additional electrodes may be formed on and through the outer insulating layer to make electrical contact with the titanium silicide and aluminum electrodes, respectively. A voltage source may be connected to the electrodes to pass a current through the porous silicon to cause light to be emitted from the porous silicon through the sapphire substrate.