The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Mar. 30, 1995
Applicant:
Inventors:
Charles E Weitzel, Mesa, AZ (US);
Mohit Bhatnagar, Mesa, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257330 ; 257409 ;
Abstract
A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region (24) near a gate insulator (17). The increased depletion region width improves the breakdown voltage.