The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
May. 24, 1995
Kazuyuki Yahiro, Kawasaki, JP;
Shuji Itonaga, Kitakyushu, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor device according to the present invention, a diffusion layer is formed on a silicon substrate, and a Silicon oxide film is deposited thereon. A hole communicating with the diffusion layer is formed in the silicon oxide film. A silver bromide emulsion is applied to the silicon oxide film having the hole by the spin coat technique. The silver bromide emulsion is irradiated with light through a mask to leave only that portion of the emulsion which is exposed by the light. By doing so, a metal wiring is formed integrally with a via hole, and thus decreased in resistance and suitable for forming the via hole. Consequently, a semiconductor device having such a wiring can be obtained easily, inexpensively.