The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Jun. 06, 1995
Alexander H Owens, Los Gatos, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
An improved MOS-type integrated circuit structure, and a method of making same, are described wherein a diode is electrically connected between the polysilicon gate electrode and the semiconductor substrate, and physically located in the substrate below the contact area of the polysilicon gate electrode so that no extra lateral space is needed to provide such a diode connection between the polysilicon gate electrode and the substrate. The junction is formed in the substrate in a region where the contact area of the gate electrode is usually positioned over field oxide. An opening is provided for the diode in the field oxide region of the substrate, by masking off an additional portion of the substrate, when the field oxide is initially grown, to provide for location of the diode therein.