The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Oct. 16, 1995
National Science Council, Taipei, TW;
Abstract
The present invention provides a process for depositing diamond by chemical vapor deposition without using conventionally-used hydrogen, which is an explosive gas, as a reaction gases. The process includes contacting a substrate with a two-component gas mixture, under the conditions of a substrate temperature of 150.degree. C.-900.degree. C., a pressure of 1-50 torr, an input microwave power of 250-450 W. The two-component gas mixture is a hydrocarbon (C.sub.x H.sub.y) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y to CO.sub.2 of 0.2-0.8, or a gasified liquid state oxygen-containing hydrocarbon (C.sub.x H.sub.y O.sub.z) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y O.sub.z to CO.sub.2 of 12-17. High quality diamond can be obtained even at low temperature of 180.degree. C.