The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
May. 17, 1996
Yutaka Shiraishi, Hiratsuka, JP;
Yihao Chang, Kanata, CA;
Kamatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Abstract
An apparatus for precisely detecting the diameter of the single-crystal material which is fabricated by a continuously charged method is disclosed. Variables such as the crucible raising amount, the material charging amount and the weight of a growing single crystal can be detected by conventional detecting apparatus. A present melt surface position is obtained by initial melt surface position+the crucible raising amount +(material charging amount/crucible area)-(weight of the single-crystal/crucible area) and then provided to a diameter control apparatus. The sensing angle with respect to the initial melt surface position 3a is .theta.. The height from initial melt surface position 3a to one-dimensional image sensor 2 is h. The horizontal distance between the scanning line and the one-dimensional image sensor is r. When the melt surface falls by a distance of a .DELTA.h from position 3a to position 3b, the adjusted sensing angle .theta.' can be obtained from .theta.'=cos.sup.-1 [(h+.DELTA.h)/{(h+.DELTA.h).sup.2 +r.sup.2 }.sup.1/2 ].