The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1997
Filed:
Mar. 29, 1996
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
An improved local oxidation of silicon (LOCOS) method with recessed silicon substrate and double polysilicon/silicon nitride spacer is disclosed. The present invention includes forming a pad oxide layer on a semiconductor substrate and then forming a first silicon nitride layer on the pad oxide layer. An active region is defined by patterning and etching the pad oxide layer and the first silicon nitride layer using a photoresist mask. Thereafter, a silicon oxide layer and a second silicon nitride layer is formed. Next, a polysilicon layer is deposited over the second silicon nitride layer. The polysilicon layer, the second silicon nitride layer, and the silicon oxide layer are etched back to form a double polysilicon/silicon nitride spacer. Finally, an isolation region in the substrate is formed.