The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1997
Filed:
Feb. 24, 1995
Armand P Neukermans, Palo Alto, CA (US);
Adagio Associates, Inc., Palo Alto, CA (US);
Abstract
The forming of superhard, durable and inert mechanical microstructures, such as tips for atomic force microscopy and field emission, membranes, hinges, actuators, and sensors requires micromachining of silicon or polysilicon. The microstructures are then reacted with a hydrocarbon or ammonia gas, at a temperature in the range of 700.degree. C. to 1100.degree. C. and in partial vacuum conditions for several minutes. Gases such as methane, ethane, or acetylene will convert the surface layers to SiC, which is useful for its conductive properties, while ammonia gas will convert the surface layers to Si.sub.3 N.sub.4, which is useful for its insulative properties. Thus, the converted material will have improved physical, mechanical, chemical and electrical properties.