The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1997
Filed:
Jun. 07, 1995
Johann Bartha, Aidlingen, DE;
Johann Greschner, Pliezhausen, DE;
Robert Junginger, Boblingen, DE;
Georg Kraus, Wildberg, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for producing deep substantially vertical structures in silicon substrates, wherein in a first step, the silicon substrate is anisotropically plasma etched to a first predetermined depth, thereby creating a first structure. Subsequently, the surface of the substrate is covered conformally with an etch-resistant coating, and the horizontal parts of said coating are selectively removed. Following this removal, the substrate is anisotropically plasma etched at low temperatures to a second predetermined depth with a mixture of SF.sub.6 /O.sub.2, whereby a second structure is created. Finally, the vertical parts of the coating are removed.