The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 1997

Filed:

Nov. 27, 1995
Applicant:
Inventors:

David Angell, Poughkeepsie, NY (US);

Paul Bao-Luo Chou, Montvale, NJ (US);

Antonio Rogelio Lee, White Plains, NY (US);

Martin Clarence Sturzenbecker, Carmel, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-9 ; 20419213 ; 20419233 ; 356316 ; 36446828 ;
Abstract

A method of monitoring the status of plasma in a chamber using real-time spectral data while conducting an etch process during the course of manufacturing of semiconductor wafers. Spectral data is collected during etching, with the spectral data characterizing an emission of light from etch species contained in the plasma, and maintaining the collected data as reference data. A model of principal components of the data is generated. Additional spectral data is extracted from the plasma and compared with the model. Discrepancies pinpoint the presence of foreign material faults and help determine the cause of the failures to ensure appropriate corrective action.


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