The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Mar. 14, 1995
David L Campbell, Sunnyvale, CA (US);
James E Fox, Jr, San Jose, CA (US);
Integrated Device Technology, Inc., Santa Clara, CA (US);
Abstract
An output driver including pull-up and pull-down output transistors is formed in a silicon substrate. The source and the drain of the pull-up output transistor are formed in a common bulk region of the substrate. A bulk potential control circuit for controlling the voltage of the bulk region, a resistive element and a gate drive control circuit are also formed in the silicon substrate. A layer of interconnect formed over a top surface of the silicon substrate may selectively couple into the output driver circuit one or more of the resistive element between a source of the pull-down output transistor and a reference voltage source, the bulk potential control circuit to control the voltage of the bulk region of the silicon substrate, and the gate drive control circuit to control the rate of change of voltage on the gate of the pull-down transistor as a function of the voltage on this gate.