The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Jul. 27, 1995
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257347 ; 257 66 ; 257353 ;
Abstract
A semiconductor-on-insulator transistor (10) has a channel region (30) in a semiconductor film (16) under a gate insulating layer (26). The channel region has a top dopant concentration N.sub.T at a top surface (32) of the film that is significantly greater than a bottom dopant concentration N.sub.B at a bottom surface (34) of the film. This non-uniform doping profile provides an SOI device that operates in a fully-depleted mode, yet permits thicker films without a significant degradation of sub-threshold slope.
Klein, Kevin. (1997). Semiconductor-on-insulator transistor having a doping profile for (U.S. Patent No. 5656844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5656844
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile