The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Jun. 13, 1996
Andrew L Goodyear, Red Hill, GB;
Keith M Hutchings, Groombridge, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device (1) includes a vertical insulated gate field effect device (2) and has a semiconductor body (3) with a first semiconductor region (4) of one conductivity type adjacent one major surface (5). A second semiconductor region (6) of the opposite conductivity type is former within the first region (4) adjacent the surface (5) and a third region (7) forms with the second region (6) a rectifying junction (8) meeting the one major surface (5). A recess (9) extends into the first region (4) from the one major surface (5) so that the second and third regions (6 and 7) abut the recess (9), and an insulated gate (10) is formed within the recess (9) for controlling conduction between the first and third regions (4 and 7) along a conduction channel area (61) of the second region (6). A fourth region (11) of the one conductivity type forms with a portion (6b) of the second region (6) of the opposite conductivity type remote from the recess (9) a further rectifying junction (12) which is reverse-biassed in at least one mode of operation of the device and has a predetermined breakdown voltage for causing the device to breakdown in the vicinity of the further rectifying junction (12) away from the recess (9) when a critical voltage is exceeded.