The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Aug. 28, 1995
Kuo-Hua Lee, Wescosville, PA (US);
Chun-Ting Liu, Wescosville, PA (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The longitudinal edges of the overlying channel layer of a thin-film transistor are substantially aligned with the longitudinal edges of the underlying polysilicon gate layer. As a result of this line-on-line arrangement of the channel and gate layers, integration area is minimized so that optimum integration density is achieved. Source-to-drain on current is increased as the result of the increased channel width gained from the sidewall section of the polysilicon gate, which may occur as a result of the permissible lateral extension of the body (channel) layer over one longitudinal edge of the channel gate layer due to a misalignment in lithography or processing delta.