The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 1997

Filed:

Apr. 30, 1996
Applicant:
Inventor:

Tarja Kankkunen, Espoo, FI;

Assignee:

Vaisala Oy, Helsinki, FI;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73724 ; 73718 ; 3612834 ;
Abstract

A capacitive pressure transducer structure and a method for manufacturing the same comprises a transducer structure having a contiguous diaphragm structure (2), which at least in some parts is conducting to the end of forming a first electrode (4) of a transducing capacitor, a substrate (3) which is permanently bonded to a first surface of the diaphragm structure (2) and comprises a second electrode (5) of the transducing capacitor, spaced at a distance from and aligned essentially at the first electrode (4), and a silicon structure (1), which is permanently bonded to a second surface of the diaphragm structure (2), incorporating a space (21) suited to accommodate the deflection of the first electrode (4). The angle .alpha. formed between vertical walls (11) of the space (21) and the first electrode (4) is smaller than or equal to 90.degree., and the material surrounding the space (21) is silicon or doped silicon.


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