The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Hsingya Arthur Wang, Saratoga, CA (US);
James Juen Hsu, Saratoga, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438262 ; 438263 ;
Abstract
A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.
Wang, Hsingya. (1997). Nonvolatile memory cell formed using self aligned source implant (U.S. Patent No. 5656513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5656513
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile