The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Mar. 06, 1995
Hitoshi Shindo, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode on a substrate by using a light-intercepting material; of forming a gate insulating film on the substrate including the gate electrode; of forming a semiconductor layer on the gate insulating film; and of forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed into the semiconductor layer while not being absorbed into the substrate, is irradiated from the back of the substrate, before supplying impurities into the semiconductor layer.