The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 1997

Filed:

Apr. 08, 1994
Applicant:
Inventors:

Gerard A Mourou, Ann Arbor, MI (US);

Detao Du, Ann Arbor, MI (US);

Subrata K Dutta, Ann Arbor, MI (US);

Victor Elner, Ann Arbor, MI (US);

Ron Kurtz, Ann Arbor, MI (US);

Paul R Lichter, Ann Arbor, MI (US);

Xinbing Liu, Ann Arbor, MI (US);

Peter P Pronko, Dexter, MI (US);

Jeffrey A Squier, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
21912169 ;
Abstract

In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (F.sub.th) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused to a point at or beneath the surface of a material where laser induced breakdown is desired. The beam may be used in combination with a mask in the beam path. The beam or mask may be moved in the x, y, and Z directions to produce desired features. The technique can produce features smaller than the spot size and Rayleigh range due to enhanced damage threshold accuracy in the short pulse regime.

Published as:
CA2186451A1; WO9527587A1; AU2274195A; EP0754103A1; US5656186A; EP0754103B1; ATE159880T1; JPH09511688A; DE69500997D1; AU684633B2; DE69500997T2; USRE37585E; JP3283265B2; JP2002205179A; JP3824522B2; CA2186451C;

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