The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Apr. 01, 1996
Peter David Bailey, Phoenix, AZ (US);
Paul William Schwerman, Phoenix, AZ (US);
Peter James Bobrowitz, Glendale, AZ (US);
Honeywell Inc., Minneapolis, MN (US);
Abstract
A novel bias circuit provides precise base emitter voltage(V.sub.BE) which tracks the temperature coefficient of an RF transistor using low cost devices. The bias circuit includes a precision current source which injects current through a P-N junction device to derive a temperature compensating reference voltage thereacross. The P-N junction device is isolated from current fluctuations using a current isolation circuit coupled between the P-N junction device and the base of the RF transistor. The diode is thereby isolated from and unaffected by changes in the base current of the RF transistor. Multiple RF transistors are biased from the single P-N junction device by replicating only a trimming potentiometer and the current isolation circuitry for each additional RF transistor to be biased.