The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Dec. 21, 1989
Applicant:
Inventor:
Masakazu Kakumu, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438306 ; 438232 ; 438233 ; 438533 ; 438659 ;
Abstract
In a method for manufacturing a semiconductor device, metal ions are doped into the surface regions of diffusion layers or a diffusion layer forming region, thereby forming metal silicide layers of low resistance on only the diffusion layers. In a further method for manufacturing a semiconductor device, metal ions are doped into the surface regions of diffusion layers or a diffusion layer forming region and the upper surface of a gate electrode. Then, the structure is subjected to a process to make a silicide, thereby forming metal silicide layers of low resistance on only the diffusion layers and the gate electrode.