The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Jun. 27, 1995
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for fabricating a semiconductor memory element which has an excellent insulation property suitable for high density integration, including the steps of forming self-aligning plate electrodes by etching a dielectric film covering an upperside protective layer by an amount sufficient to expose each of the dielectric films, forming a third insulation film the entire surface thereof, exposing the upperside protection layer by etching the third insulation film with photosensitive films used as masks, forming a bit line contact by etching the upperside protection layer and the underside protection layer until the impurity region through the bit line contact.
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