The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 1997

Filed:

Jun. 25, 1996
Applicant:
Inventor:

Richard H Wittstruck, Howell, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B / ;
U.S. Cl.
CPC ...
3311 / ; 3311 / ; 257 76 ;
Abstract

Micro-scale and nano-scale devices which achieve high frequency signals ug materials having increased electron saturation velocity. These devices have frequencies in the terahertz range with high temperature and radiation hard characteristics. The transit time device includes a substrate, a buffer layer and an epitaxial layer made of a material in the 43 m and 6 mm crystallographic point groups and associated alloys, and at least two contacts on the device. In operation, one contact is forward biased and the other is reversed biased. Applications for this devices include transit-time-based oscillators for use in military and civilian radar receivers, logic devices, burglar alarm and proximity alarm systems.


Find Patent Forward Citations

Wittstruck, Richard. (1997). Method for high frequency device operation with high temperature and (U.S. Patent No. 5652551). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5652551

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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