The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1997
Filed:
Jun. 21, 1995
Edwin Roks, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
The invention relates to a charge coupled device with a buried channel in which charge is detected by a MOST (MOS transistor) incorporated in the channel and having a surface channel of the conductivity type opposed to that of the charge coupled device. The source zone is situated in the centre of the CCD channel and is formed simultaneously with the channel bounding zone. The gate electrode comprises two portions situated on either side of the source zone, which portions, seen at the surface, do not overlap the source and drain zones. Below the gate electrode, a zone is formed of the same conductivity type as but with a higher doping than the CCD channel, which zone forms a charge storage region for the charge packet to be read out during the reading-out process. The source and drain zones are connected to the MOST channel region by means of extensions. The detector can be manufactured in a self-aligned manner, has a high charge storage capacity, a good noise behaviour, and a high speed.