The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1997
Filed:
Sep. 01, 1995
Applicant:
Inventors:
Eric A Martin, Medford, MA (US);
Kenneth Vaccaro, Acton, MA (US);
Stephen M Spaziani, Nashua, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 21 ; 257184 ; 257449 ; 257453 ;
Abstract
A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigitated electrodes lying in a single plane, response time is improved due to reduced spacing between the electrodes. Response time is also improved since capacitance is reduced due to inherently low doping levels in the semiconductor material. Laterally offset finger electrodes are made light reflective to increase the production of carriers in the InGaAs absorption layer.