The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1997
Filed:
Jan. 04, 1995
Applicant:
Inventor:
Toyokazu Fujii, Nara, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437 / ; 437 57 ; 437193 ;
Abstract
A method for fabricating a semiconductor device which includes a metal silicide film for electrically connecting a first silicon region containing a p-type impurity with a second silicon region containing an n-type impurity is disclosed. The method includes the step of depositing the metal silicide film so as to contain excessive silicon. Such excessive silicon is precipitated in silicide grain boundaries in the metal silicide film and thus makes a diffusion path of impurities along the silicide grain boundaries discontinuous.